Electric-field dependence of interband transitions in ln&3a0&W ln0,52A10,48As ingle quantum wells y room-temperature electrotransmittance
نویسندگان
چکیده
Room-temperature electrotransmittance has been used in order to investigate the interband excitonic transitions in a 250~A-thick In o.53Gao.47As/Ino.52A.~~s ingle-quantum-well system as a function of an externally applied electric field. Parity forbidden transitions, involving conduction-band states with quantum numbers up to n = 5, which become more pronounced at high electric fields were observed. The ground-state and the forbidden transitions showed a significant red shift due to the quantum confined Stark effect. A comparison with previously reported results on thinner InGaAs/InAlAs quantum wells indicated that the wide-well sample exhibits the largest shift, as expected from theory. Despite the appreciable Stark shift, the rather large, field-induced linewidth broadening and the relatively low electric field at which the ground-state exciton is ionized poses limitations on using this wide-quantum-well system for electro-optic applications.
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